esemi-c on , u nc, MRF894 20 stern ave. springfield, new jersey 07081 usa npn silicon rf power transistor telephone: (973) 376-2922 (212) 227-6005 description: ! MRF894 is agold metalized epitaxial silicon npn transistor, using diffused ballast resistors for high linearity calss-ab operation for cellular base station application. features: ? internal input matching network ? pg = 7.5 db at 30 w/960 mhz ? omnigold? metalization system ? tic = 55 % typ. ? = load mismatch capability 20:1 maximum ratings ic vcbo vceo vebo pdiss tj tstg 9jc 7.5 a 48v 25v 3.5v 88 w @ tc = 25 -65 c to +200 -65 c to +150 c c c 2.0 c/w package style .230 6l flg i i .430! d e1 i ! dim a b c d e f g h 1 j k l - a - r -b- 040x45" . 4x .025 r v ... . .115 i ! , . : . 125 - -~ f g h i i , \ ,,...... minimum nches / mm .355/9.02 115/2 92 075 /1.91 .225 /5,72 .090 12 29 .720/ 18.29 970/2464 .355/9.02 .004/0.10 120/305 .160/4.06 .230/5.84 2x0 / / ^ ^ 1 j k 1 ! maximum inches / mm .365/9.27 .125/3.18 .085 12 16 ,235/5.97 ,110/2.79 730 / 18.54 ,980/24.89 365/9 27 .006/0.15 130/3.30 180/4,57 .260 /6.60 130 1 l f characteristics tc = 25c symbol bvceo bvcer bvceo bvebo icbo hfe cob pg imd3 t!c test conditions lc = 100 ma lc = 40ma rbe = 150q lc = 40 ma ie= 10ma vce = 24 v vce = 20v ic = 2.0a vcb = 25 v f = 1 .0 mhz vce = 25 v icq = 60 ma f = 860 mhz pout = 30 w f, = 860.0 mhz f 2 = 860.1 mhz minimum 48 30 25 3.5 10 15 7.5 typical 55 40 28 5.0 ? 40 42 9.0 -35 55 maximum ? ? ? ? ? 100 50 ... units v v v ma ... pf db dbc % nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice, information furnished by n.i semi-conductors is believed to be both accurate and reliable at the time of mint to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use \ semt-( onductors encourages customers to verity that datasheets are current before placing orders
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